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| Low VF Chip Schottky Barrier Diodes SL13-M Silicon epitaxial planer type Formosa MS SOD-123 0.161(4.1) 0.146(3.7) 0.012(0.3) Typ. Features Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy M olding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current. 0.063(1.6) 0.055(1.4) 0.071(1.8) 0.055(1.4) 0.126(3.2) 0.110(2.8) 0.035(0.9) Typ. 0.035(0.9) Typ. Mechanical data Case : Molded plastic, JEDEC SOD123 / MINI SMA Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by c athode band Mounting P osition : Any Weight : 0.04 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS (AT TA=25oC unless otherwise noted) PARAMETER Forward rectified current 50 Hz sine wave , R-load Forward surge current On alumina substrate TL = 129o C On glass-epoxy substrate 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TA = 25o C CONDITIONS Symbol IO MIN. TYP. MAX. 1.29 1.1 IFSM 30 0.5 10 Rq JA CJ TSTG -55 42 90 +150 o UNIT A A A mA mA C/w pF o Reverse current Thermal resistance Diode junction capacitance Storage temperature VR = VRRM TA = 100o C Junction to ambient f=1MHz and applied 10vDC reverse voltage IR C SYMBOLS MARKING CODE L3 V RRM (V) *1 V RMS (V) 21 *2 VR *3 VF *4 Operating temperature ( o C) -55 to +125 *1 Repetitive peak reverse voltage *2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward voltage (V) 30 (V) 0.40 SL13-M 30 RATING AND CHARACTERISTIC CURVES (SL13-M) FIG.1-TYPICAL FORWARD CHARACTERISTICS AVERAGE FORWARD CURRENT,(A) FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE 50 INSTANTANEOUS FORWARD CURRENT,(A) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 180 200 Single Phase Half Wave 60Hz Resistive Or Inductive Load 10 3.0 1.0 Tj=25 C Pulse Width 300us 1% Duty Cycle AMBIENT TEMPERATURE ( C) FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PEAK FORWAARD SURGE CURRENT,(A) 50 0.1 .01 .1 .3 .5 .7 .9 1.1 1.3 1.5 40 FORWARD VOLT AGE,(V) 30 Tj=25 C 8.3ms Single Half Sine Wave JEDEC method 20 10 FIG.3 - TYPICAL REVERSE CHARACTERISTICS 100 0 1 5 10 50 100 NUMBER OF CYCLES AT 60Hz REVERSE LEAKAGE CURRENT, (mA) 10 350 300 250 200 150 100 50 0 FIG.5-TYPICAL JUNCTION CAPACITANCE 1.0 Tj=75 C .1 Tj=25 C .01 0 JUNCTION CAPACITANCE,(pF) .01 .05 .1 .5 1 5 10 50 100 20 40 60 80 100 120 140 REVERSE VOLTAGE,(V) PERCENTAGE RATED PEAK REVERSE VOL TAGE |
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